MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202621098927 A) filed by Hetalben Hirenkumar Savaliya; and Hirenkumar Vallabhbhai Savaliya on August 16, 2026, for Dual-Side Gan- And Graphene-Functionalized Polycrystalline Diamond Wafer And Fabrication Method.
Inventor includes Hirenkumar Vallabhbhai Savaliya.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: A dual-side functionalized semiconductor wafer (100) comprises a monolithic polycrystalline-diamond body (102) of 70-200 mm diameter (206) carrying a GaN- compatible functional interface (108) at a first surface (104) and a graphene-based layer (110) on an opposing second surface (106). An insulating buffer layer (114) of AlN or SiN and a gallium nitride semiconductor layer (116) are carried on the first surface (104). Heat from an active device region (126) is conducted vertically (128) through the diamond body (102) and spread laterally (130) through the graphene-based layer (110) towards a heat-sink interface (132), which may serve additionally as a ground plane through a conductive connection (134). Fabrication comprises stress-controlled MPCVD growth (168), controlled cool-down (170), release (208), laser leveling (172) and chemical-mechanical planarization (174) of both surfaces below 3 nm RMS, followed by dual-side functionalization without further mechanical polishing.
Disclaimer: Curated by HT Syndication.
