MUMBAI, India, July 31 -- Intellectual Property India has published a patent application (202521004647 A) filed by Rajesh B. Morey; and Dr. Sunil N. Pawar on January 21, 2025, for Double Layer Centrally Located Structure Based On Ebg..
Inventors include Rajesh B. Morey; and Dr. Sunil N. Pawar.
The application for the patent was published on July 24, 2026, under issue no. 30/2026.
Abstract: ABSTRACT Double layer centrally located structure based on EBG The present invention discloses a novel electromagnetic band gap (EBG) structure, termed Double Layer Centrally located Via (DLCV-EBG), designed for operation at 3.22 GHz. The structure comprises two substrate layers, each hosting a centrally located patch - a square patch on the first layer and a circular patch on the second. A via, positioned centrally, connects these two layers. Hie unique configuration results in a compact design, making it ideal for applications where space is limited. The DLCV-EBG's characteristics are analyzed using the Suspended Microstrip Line (SML) method, demonstrating a reflection phase centered at 3.22 GHz and a patch size of 0.15X. The invention also explores the application of the DLCV-EBG in reducing radar cross-section (RCS), particularly in multilayer, low-frequency environments. The proposed EBG checkerboard pattern, utilizing the DLCV-EBG, aims to achieve RCS reduction by effectively redirecting scattered electromagnetic waves. The invention's compact size and RCS reduction capabilities make it a promising solution for various microwave applications, particularly those requiring stealth technology.
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