MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202647094320 A) filed by Qualcomm Incorporated on August 04, 2026, for Device With Side-By-Side Integrated Circuit Devices.
Inventors include Buot, Joan, Rey, Villarba; We, Hong, Bok; Wang, Zhijie; and Lee, Sang-Jae.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: A device includes a substrate that includes a first layer stack including metal and dielectric layers. A first metal layer includes first contacts disposed in a first region and to electrically connect to an IC device, via pads disposed in a second region offset along a first direction, and traces electrically connecting the first contacts and the via pads. The substrate includes, in both regions, a solder resist layer disposed on the first metal layer and a first dielectric layer. The solder resist layer defines openings to the first contacts and the via pads. The substrate includes a second layer stack disposed on the second region and including a second metal layer on the solder resist layer opposite the first layer stack. The second metal layer defines second contacts to electrically connect to second IC device(s) and includes conductive vias between the via pads and the second contacts.
Disclaimer: Curated by HT Syndication.
