MUMBAI, India, Aug. 17 -- Intellectual Property India has published a patent application (202621082423 A) filed by Indian Institute Of Technology Gandhinagar on July 03, 2026, for Device And Method For Deterministic, Field-Free Magnetization Switching In A Synthetic Antiferromagnetic Magnetic Tunnel Junction.
Inventors include Das, Subham; and Sisodia, Naveen.
The application for the patent was published on August 14, 2026, under issue no. 33/2026.
Abstract: ABSTRACT DEVICE AND METHOD FOR DETERMINISTIC, FIELD-FREE MAGNETIZATION SWITCHING IN A SYNTHETIC ANTIFERROMAGNETIC MAGNETIC TUNNEL JUNCTION The present disclosure relates to a device (100) and a method (200) for deterministic, field free magnetization switching in a synthetic antiferromagnetic (SAF) magnetic tunnel junction (MTJ). The device comprises an MTJ stack (110) with a reference layer (111), a tunnel barrier (112), an SAF free layer structure (113) having two ferromagnetic layers (114,115) antiferromagnetically coupled, and a heavy metal layer (117) contacting the first free layer (114). A first current source (120) generates a spin orbit torque (SOT) current pulse, and a second current source (130) generates a spin transfer torque (STT) current pulse. A pulse controller triggers the SOT pulse to rotate magnetizations from out of plane to in plane, then immediately triggers the STT pulse with zero delay to determine the switching direction from a first antiparallel state (AP1) to a second antiparallel state (AP2) or vice versa, without any external magnetic field.
Disclaimer: Curated by HT Syndication.
