Intellectual Property India Publishes Patent Application for Design And Optimization Of A U-Shaped Meander Rf Mems Shunt Switch With Improved Mechanical And Rf Performance

MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202641115437 A) filed by Vallurupalli Nageswara Rao Vignana Jyothi Institute Of Engineering And Technology on September 26, 2026, for Design And Optimization Of A U-Shaped Meander Rf Mems Shunt Switch With Improved Mechanical And Rf Performance.

Inventor includes Mr. Sk. Shoukat Vali.

The application for the patent was published on October 02, 2026, under issue no. 40/2026.

Abstract: ABSTRACT [0027] The design and analysis of RF MEMS shunt switches for K-band applications are presented in this research, with particular attention to three beam configurations: planar, crab-leg meander, and U-shaped meander. Each design was assessed for pull-in voltage, capacitance ratio, insertion loss, and return loss using COMSOL for mechanical simulation and HFSS for radio frequency analysis. With a low pull-in voltage of 5.3 V, a high capacitance ratio of 96.5, a quick switching time of 1.2 µs, and superior RF properties like a –30.5 dB return loss and –28.6 dB isolation, the U-shaped meander beam (Design 3) performed the best among them. These findings validate Design 3's high suitability for radar and satellite applications by demonstrating greater mechanical reliability and radio frequency performance over the 18–26 GHz K-band spectrum. [0028] This invention compares three different beam designs planar, crab-leg meander, and U-shaped meander in order to examine the performance of RF MEMS shunt switches using analytical modelling and simulation. The designs were simulated using HFSS to examine electromagnetic performance and COMSOL to assess mechanical behaviours such as stress, switching time, and pull-in voltage. Design 3, with its U-shaped meander and perforations, was superior in every way. It maintained return and isolation losses of –30.5 dB and –28.6 dB, respectively, over the K-band (18–26 GHz) while achieving a low pull-in voltage of 5.3 V and a high capacitance ratio of 96.5. Perforations improved structural resilience by successfully lowering mechanical stress and stiction. These findings support Design 3's capacity to provide next-generation RF systems with high-performance, low-power switching.

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