MUMBAI, India, July 7 -- Intellectual Property India has published a patent application (202641078401 A) filed by Mohan P on June 25, 2026, for Design And Development Of A High-Efficiency Adaptive Hybrid Semiconductor Static Voltage Stabilizer With Thermal-Aware Control And Iot-Based Performance Optimization. ((si Igbt+ Sic Mosfet + Gan).
Inventors include Mohan P; and Dr. K Rathnakannan.
The application for the patent was published on July 03, 2026, under issue no. 27/2026.
Abstract: The present invention discloses a high-efficiency adaptive hybrid semiconductor static voltage stabilizer employing coordinated operation of Silicon IGBT, Silicon Carbide (SiC) MOSFET, and Gallium Nitride (GaN) semiconductor devices controlled through FPGA-based intelligent control architecture. The proposed system utilizes adaptive semiconductor allocation, thermal-aware switching optimization, soft-switching operation, dq-axis control, and Space Vector Pulse Width Modulation (SVPWM) for improved voltage regulation and power quality enhancement. The stabilizer dynamically compensates voltage sag, swell, harmonics, and transient disturbances while minimizing switching losses, thermal stress, and Total Harmonic Distortion (THD). The invention incorporates real-time sensing, protection logic, desaturation protection, overcurrent protection, undervoltage lockout, thermal management, and IoT-based monitoring for industrial and real-time applications. The proposed system demonstrates superior efficiency, faster transient response, lower overshoot, improved reliability, and enhanced power conditioning performance compared to conventional static stabilizers.
Disclaimer: Curated by HT Syndication.
