MUMBAI, India, Sept. 7 -- Intellectual Property India has published a patent application (202617082061 A) filed by International Business Machines Corporation on July 03, 2026, for Compressive Strain In Stacked Nanosheet Field Effect Transistor.
Inventors include Ando, Takashi; Cohen, Guy, Moshe; and Gong, Nanbo.
The application for the patent was published on September 04, 2026, under issue no. 36/2026.
Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure includes an NFET transistor with NFET nanosheets and a first workfunction setting metal that is pinched off within spaces between the NFET nanosheets and a PFET transistor with PFET nanosheets surrounded by a thin layer of a second workfunction setting metal. The semiconductor structure also includes a doped metal between the PFET nanosheets surrounded by the thin layer of the second workfunction setting metal.
Disclaimer: Curated by HT Syndication.
