MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202631085169 A) filed by Indian Institute Of Technology Bhubaneswar on July 11, 2026, for Composition Graded Semiconductor Nanolayers-Based Ultrafast And Broadband Photodetector.
Inventors include Dr. Satchidananda Rath; and Ms. Priyanka Kumari.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: ABSTRACT TITLE: Composition graded semiconductor nanolayers-based ultrafast and broadband photodetector The present invention provides for (i) growth of stacked nanolayers heterostructure out of Cadmium Selenide (CdSe) and Cadmium Sulphide (CdS), (ii) Fabrication of Schottky Devices and (iii) realization of picosecond (ps) fast broadband photodetector in the visible regime. Figure 1(a)
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