MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202611069200 A) filed by Indian Institute Of Technology Delhi on June 02, 2026, for Binder-Free Sno2 Nanocrystallization Via Solvent-Controlled Synthesis For Thin-Film Fabrication.
Inventors include Singh, Trilok; Gupta, Sidhanta; Singh, Paulomi; and Bansal, Nitin Kumar.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: The present invention relates to a binder-free, solvent-controlled method for synthesizing tin oxide (SnO2) nanocrystals for thin-film fabrication. A tin precursor is subjected to oxidation, hydrolysis, and condensation in an aqueous medium under controlled ageing conditions to obtain a substantially converted SnO2·xH2O material, which is isolated as a semi-crystalline solid. The solid is redispersed in an alcohol solvent to form a stable, homogeneous nanocrystalline dispersion without the use of binders or stabilizing agents. The dispersion is deposited onto a substrate and annealed at low temperature to form a nanocrystalline SnO2 thin film. The method enables formation of chemically pure films with controlled particle size and improved reproducibility. The precursor is storable in both solid and dispersion forms, providing operational flexibility. The process is cost-effective, environmentally friendly, and compatible with scalable manufacturing techniques for optoelectronic devices including perovskite solar cells.
Disclaimer: Curated by HT Syndication.
