MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202647104457 A) filed by Applied Materials, Inc. on August 31, 2026, for Barrier And Liner Treatment Using Dual Radio Frequency Capacitive Couple Plasma For Metal Interconnects.
Inventors include Hwang, Shinjae; and Kashefi, Kevin.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: A processing method includes depositing a barrier layer on a field region and sidewalls of a via of an interconnect structure, wherein depositing the barrier layer comprises establishing a single RF frequency capacitively coupled plasma (CCP) using a first radio frequency (RF) generator by delivering a first RF signal from the first radio frequency (RF) generator at a first RF frequency to a first electrode, and treating the barrier layer by establishing a dual RF frequency CCP, wherein the dual RF frequency CCP is formed using the first RF generator and a second RF generator coupled to the first electrode, the dual RF frequency CCP is formed by simultaneously delivering a second RF signal at the first RF frequency to the first electrode and a third RF signal at a second RF frequency to the first electrode, and the first RF frequency is greater than the second RF frequency.
Disclaimer: Curated by HT Syndication.
