MUMBAI, India, Aug. 31 -- Intellectual Property India has published a patent application (202641101044 A) filed by Sri Eshwar College Of Engineering on August 20, 2026, for Analytical Modeling And Performance Benchmarking Framework For Spin-Orbit Torque Magnetic Random Access Memory (sot-Mram).
Inventors include Dr Mohankumar M; Ms. Sharmila Parveen M; Ms. Mohanapriya K; and Mr. Shivanandham R S.
The application for the patent was published on August 28, 2026, under issue no. 35/2026.
Abstract: The invention provides an analytical and simulation-driven framework for modeling, analyzing, and benchmarking Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM). The proposed system integrates a modified Landau–Lifshitz–Gilbert (LLG) equation with spin-orbit torque effects to accurately predict magnetization dynamics under varying electrical, magnetic, and material conditions. The invention incorporates a comprehensive effective field model that accounts for anisotropy field, demagnetizing field, external field, and spin-Hall induced torque, enabling precise computation of critical switching current density, switching delay, energy consumption, and magnetization trajectory. The invention includes a MATLAB-based simulation engine that solves the LLG equation numerically and generates performance curves for switching time, energy–delay optimization, current density scaling, and angular switching characteristics. Benchmarking capability is integrated to compare SOT-MRAM with other memory technologies such as STT-MRAM and SRAM. The model demonstrates significantly reduced switching delay ( 1 ns), improved endurance, lower write current, and zero read-disturb due to separation of read and write paths. This invention provides an efficient design and optimization tool for high-speed, low-power non-volatile memory applications, making it suitable for embedded systems, AI accelerators, IoT nodes, and next-generation computing platforms.
Disclaimer: Curated by HT Syndication.
