MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202641112990 A) filed by Sr University on September 21, 2026, for An Optical Surrounding Gate Mosfet Device For Optical Control Of A Semiconductor Channel.
Inventors include Dr. Aditya Agarwal; Dr. Sandip Bhattacharya; Dr. Prashant Mani; Dr. Biswajit; Dr. Saptarshi Gupta; Mr. Amit; Dr. Dola Gobinda Padhan; and Dr. Nishant Srivastava.
The application for the patent was published on September 25, 2026, under issue no. 39/2026.
Abstract: ABSTRACT Disclosed herein is an optical surrounding gate MOSFET device (100) for optical control of a semiconductor channel that comprises a substrate (102), a semiconductor channel (104), source region (106), drain region (108), gate dielectric (110), and surrounding gate electrode (112). An optically transmissive conductive electrode (114) permits transmission of optical radiation toward the semiconductor channel (104), while a photovoltaic layer (116) generates charge carriers in response to the optical radiation. An optical aperture (118), optical coupling structure (120), anti-reflection structure (122), and waveguide (124) facilitate optical transmission toward the semiconductor channel (104) and/or the photovoltaic layer (116). An interlayer dielectric (126), contact via (128), and metallization layer (130) provide electrical insulation and interconnection. The optical radiation modifies charge distribution and threshold voltage of the device (100), thereby modulating drain current and enabling optical control of conductivity of the semiconductor channel (104) together with and independently of electrical gate bias.
Disclaimer: Curated by HT Syndication.
