MUMBAI, India, June 26 -- Intellectual Property India has published a patent application (202621053121 A) filed by Mr. Bandi Venkata Chandan; Dr. Kaushal Kumar Nigam; Mr. Gadi Harshavardhan; Dr. Dharmender; Dr. Mukesh Kumar Bind; and Parvin Akhter on April 26, 2026, for An Electrostatic Doped Magnesium Silicide Based Tunnel Field Effect Transistor System With Enhanced Reliability And Reduced Interface Trap Sensitivity.
Inventors include Mr. Bandi Venkata Chandan; Dr. Kaushal Kumar Nigam; Mr. Gadi Harshavardhan; Dr. Dharmender; Dr. Mukesh Kumar Bind; and Parvin Akhter.
The application for the patent was published on June 19, 2026, under issue no. 25/2026.
Abstract: The present invention relates to an electrostatically doped magnesium silicide based tunnel field effect transistor system (100). The system comprises a semiconductor body (1) having a silicon drain region (2), an intrinsic silicon channel region (3), and a magnesium silicide source region (4) forming a heterojunction with the intrinsic channel region (3). A first polarity gate assembly (5), a control gate assembly (7), and a second polarity gate assembly (9) are arranged across corresponding dielectric assemblies (6, 8, 10) to electrostatically induce drain and source polarities and control a tunneling window. A drain contact (11), a source contact (12), and a biasing arrangement (13) are provided for operation. The heterojunction and electrostatic doping enhance band-to-band tunneling, improve ON-current, and reduce interface trap sensitivity. In an embodiment, a data generation and preprocessing module (14) and an ensemble prediction module (15) provide reliability-aware prediction of device characteristics under varying trap and bias conditions.
Disclaimer: Curated by HT Syndication.
