MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202611101003 A) filed by Graphic Era Deemed To Be University on August 20, 2026, for A System And Method For Numerical Optimization Of Sno2/Cssngei3/Masnbr3 Lead-Free Perovskite Solar Cells.
Inventors include Abhijit Kumar Kar; Mnisha; and Chandni Tiwari.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: The invention relates to photovoltaic device simulation and optimization of lead-free perovskite solar cells. It discloses a multilayer heterojunction stack comprising a front contact, a SnO2 electron transport layer, a CsSnGeI3 absorber layer, a MASnBr3 hole transport layer, and a back contact arranged in the sequence front contact/SnO2/CsSnGeI3/MASnBr3/back contact, wherein sunlight enters from the front contact side, charge generation occurs primarily in the CsSnGeI3 absorber, electrons are extracted through SnO2, and holes through MASnBr3. Using SCAPS-1D, the system numerically solves Poisson’s equation and electron and hole continuity equations while varying absorber thickness, electron affinity, bulk and interface defect density, and temperature. The invention provides a technically advanced lead-free architecture with optimized absorber thickness of 1.5 to 2.0 µm, absorber electron affinity of 3.9 eV, and controlled defect densities for improved dark and illuminated current-voltage response and quantum efficiency.
Disclaimer: Curated by HT Syndication.
