MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202611101005 A) filed by Graphic Era Deemed To Be University on August 20, 2026, for A System And Method For Interface Defect Analysis Of Sno2/Bazrs3/Cu2o Heterojunction Solar Cells.
Inventors include Abhijit Kumar Kar; Mnisha; and Chandni Tiwari.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: The invention relates to photovoltaic device simulation and analysis of heterojunction solar cells. Disclosed is a planar SnO2/BaZrS3/Cu2O stack in which SnO2 serves as a front electron transport and light-incident layer, BaZrS3 serves as an absorber, and Cu2O serves as a hole transport layer, with ultra-thin interface defect layers IDL1 and IDL2 respectively introduced at the SnO2/BaZrS3 and BaZrS3/Cu2O interfaces. Using an SCAPS-1D framework that solves Poissons equation and carrier continuity equations under steady-state AM1.5G illumination, the system independently varies interface defect densities, absorber bulk defect density, and absorber thickness to obtain J-V characteristics, quantum efficiency, Voc, Jsc, fill factor, and power conversion efficiency. The invention enables asymmetric interface-defect sensitivity analysis and improved identification of recombination-limiting junctions for design and optimization of BaZrS3-based heterojunction solar cells.
Disclaimer: Curated by HT Syndication.
