MUMBAI, India, June 26 -- Intellectual Property India has published a patent application (202641073115 A) filed by Qcarbon Materials Private Limited on June 12, 2026, for A System And A Method Of Fabricating A Semiconductor Heterostructure For Thermal Management.
Inventors include Nixon Patel; and Malay Rajesh Hirani.
The application for the patent was published on June 19, 2026, under issue no. 25/2026.
Abstract: ABSTRACT A SYSTEM AND A METHOD OF FABRICATING A SEMICONDUCTOR HETEROSTRUCTURE FOR THERMAL MANAGEMENT The present invention relates to a semiconductor heterostructure (100) for thermal management. The semiconductor heterostructure (100) comprises a silicon substrate, a phonon- bridging interlayer, and a diamond layer. Further, the phonon-bridging interlayer is disposed on a surface of the silicon substrate. Further, the diamond layer is disposed on the phonon-bridging interlayer. Further, the phonon-bridging interlayer comprises a material having acoustic phononic characteristics intermediate between a maximum optical phonon frequency of the silicon substrate and a maximum optical phonon frequency of the diamond layer. [
Disclaimer: Curated by HT Syndication.
