MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202611101004 A) filed by Graphic Era Deemed To Be University on August 20, 2026, for A Solar Cell And Simulation Method For Interface-Engineered Lead-Free Bazrs3 Photovoltaic Devices.
Inventors include Abhijit Kumar Kar; Mnisha; and Chandni Tiwari.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: The invention relates to lead-free chalcogenide perovskite photovoltaics and to simulation-based optimization of a planar n-i-p solar cell having FTO/CdS/BaZrS3/CuSCN/Au architecture with interface defect layers IDL1 at the CuSCN/BaZrS3 interface and IDL2 at the BaZrS3/CdS interface. Compared with existing lead-free photovoltaic designs, the invention advances performance by engineering conduction band offset through CdS electron affinity and hole extraction energetics through CuSCN work function, while controlling bulk and interfacial recombination in BaZrS3 absorbers having a bandgap of about 1.8 eV to 1.9 eV. A SCAPS-1D method under AM1.5G and 300 K performs parameter sweeps for absorber thickness, defect densities, CdS electron affinity, and CuSCN work function, and identifies a preferred regime including 500 nm to 700 nm absorber thickness, +0.1 eV to +0.2 eV conduction band offset, and 5.05 eV to 5.15 eV CuSCN work function, useful for designing high-efficiency lead-free solar cells.
Disclaimer: Curated by HT Syndication.
