MUMBAI, India, Sept. 7 -- Intellectual Property India has published a patent application (202617046366 A) filed by Volta Semiconductor, Inc. on April 10, 2026, for A Semiconductor Power Device.
Inventors include Nebesnyi, Valerii; Widjaja, Yuniarto; Zeni, Nikolas; Duan, Meng; Asenov, Asen; Topaloglu, Ismail; and Bensouiah, Djamel.
The application for the patent was published on September 04, 2026, under issue no. 36/2026.
Abstract: Semiconductor power devices having lower resistance and higher breakdown voltage are disclosed. Methods of operating the semiconductor power devices are disclosed. The semiconductor power device comprises: a drain region; a first region contacting the drain region and having a same conductivity type as a conductivity type of the drain region, the first region being more lightly doped compared to a doping of the drain region; a source region; a second region in contact with the first region and the source region; a gate region; a gate insulator layer positioned at least in part between the gate region and the second region; a body electrode configured to provide bias to the second region; and a source electrode configured to provide bias to the source region, wherein independent control of the second region and the source region are enabled.
Disclaimer: Curated by HT Syndication.
