MUMBAI, India, Oct. 5 -- Intellectual Property India has published a patent application (202641115443 A) filed by Vallurupalli Nageswara Rao Vignana Jyothi Institute Of Engineering And Technology on September 26, 2026, for A Radiation-Hardened 6t Sram Cell Using Rc-Based Seu Mitigation For Gaafet And Tigfet Technologies.
Inventor includes Dr. S. Rajendra Prasad.
The application for the patent was published on October 02, 2026, under issue no. 40/2026.
Abstract: ABSTRACT [0031] As the technology in semiconductors shrinks, conventional SRAM cells are more prone to radiation-induced faults, especially Single Event Upsets (SEUs). This research explores the behavior of 6T SRAM cells implemented using Gate-All-Around Field Effect Transistors (GAAFETs) and Tri-Gate Field Effect Transistors (TIGFETs) considering important stability metrics like Static Read Noise Margin (SRNM), Static Write Noise Margin (SWNM), read/write delay, and power consumption under radiation. In order to increase the radiation hardness of such cells, a Radiation Hardening-By-Design (RHBD) approach is put forth that involves incorporating a resistive-capacitive (RC) network in between cross-coupled inverters to absorb SEU impacts. Furthermore, the Quatro-10T SRAM structure is also examined as an alternative stronger circuit-level approach with superior fault tolerance in the form of its quad-node, ten-transistor structure. This approach gives a good compromise between area overhead and SEU immunity and hence is especially suitable for moderately radiated environments. Although the Quatro-10T cell might not be very suitable for applications in extreme space, it is highly suitable for ground and low-to-moderate radiation environments. This work adds to the design of low-power, high-reliability SRAM cells based on GAAFET and TIGFET technologies, improving the design of radiation-hardened memory systems for mission- critical applications.
Disclaimer: Curated by HT Syndication.
