MUMBAI, India, Sept. 28 -- Intellectual Property India has published a patent application (202511021069 A) filed by Chairman, Defence Research & Development Organisation Drdo; and Director, Indian Institute Of Technology Jodhpur on March 08, 2025, for A Radiation Dosimeter Based On Algan/Gan High Electron Mobility Transistor (hemt) Structure.
Inventors include Vikas Pandey; Naresh Jinger; Surendra Singh Barala; Satyajit Sahu; and Mahesh Kumar.
The application for the patent was published on September 25, 2026, under issue no. 39/2026.
Abstract: The present disclosure relates to a radiation dosimeter (100) using AlGaN/GaN High Electron Mobility Transistor (HEMT) technology with a high-k dielectric material, specifically Barium Strontium Titanate (BST). The device (100) is configured as a two-terminal HEMT structure that eliminates the need for additional gate terminals and bias sources, providing high sensitivity and radiation tolerance. The present dis-closure also relates to a radiation detection circuit where the dosimeter (100) detects gamma and integrates with IoT platforms (402) for easy monitoring and data trans-mission. This design simplifies the circuitry and enhances the device's applicability in high-radiation environments.
Disclaimer: Curated by HT Syndication.
