MUMBAI, India, June 19 -- Intellectual Property India has published a patent application (202441094572 A) filed by K. Ramakrishnan College Of Engineering on December 02, 2024, for A Modified Melt Growth Technique To Grow Ultrathin Single-Crystalline Film.
Inventors include Dr. V. Kannan; Dr. R. Ilango; Ms. K. Vishwapriyaa; and Mr. I. Madhesh.
The application for the patent was published on June 05, 2026, under issue no. 23/2026.
Abstract: ABSTRACT A MODIFIED MELT GROWTH TECHNIQUE TO GROW ULTRATHIN SINGLE-CRYSTALLINE FILM The present invention discloses a modified melt growth technique that leverages a purpose-built apparatus to enable precise temperature-controlled fabrication of these films. The apparatus incorporates a thermally insulated growth chamber lined with glass wool (1) to ensure minimal heat loss, transparent glass walls (2) for real-time monitoring, and a voltage-controlled infrared (IR) heat source (3) to provide fine-tuned heating. Openings (4) in the chamber enable the seamless insertion of accessories such as sensors and film samples without disrupting thermal stability. The ultrathin single-crystalline film (5) is deposited on a silica substrate (6), which is mounted on a custom-designed sample holder (7) engineered to create and maintain a lateral temperature gradient across the film. The primary heat source, a ceramic-lined hot plate (8) enclosed within the chamber, ensures uniform melting of the nanoparticle-coated thin film. The programmable temperature controller (10) regulates the heat sources, enabling precise control over the thermal profile and gradient essential for directional crystallization. The ceramic lining (9) around the heater improves thermal efficiency and stability, ensuring optimal conditions for the growth process.
Disclaimer: Curated by HT Syndication.
