MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202611079155 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on June 26, 2026, for A Method Of Fabrication Of A Bilayer-Ambipolar Organic Field-Effect Transistor And A Product Thereof.
Inventors include Radhe Shyam; and Rajiv Prakash.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: The present invention relates to a method of fabrication of a bilayer-ambipolar organic field-effect transistor and a product thereof. The bilayer-ambipolar organic field- effect transistor (OFET) of the present invention is fabricated through a unidirectional floating film transfer method (UFTM) that allows sequential deposition of n-type and p-type semiconducting layers without dissolution of the previously deposited film. The organic field-effect transistor enables simultaneous p-type and n-type charge transport, improved interfacial charge balance and tunable ambipolar behavior. Figure 1 on sheet no.1 of the drawings may accompany the abstract when published.
Disclaimer: Curated by HT Syndication.
