MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202521086098 A) filed by Indian Institute Of Technology Gandhinagar on September 10, 2025, for A Method For The Deposition Of Niobium Nitride Film On A Substrate.
Inventors include Dabhi, Dushyant; and Panda, Emila.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: ABSTRACT The present disclosure relates to a method for depositing a niobium nitride (NbN) film on a substrate. The method of the present disclosure uses radio frequency (RF) magnetron sputtering for deposition of the NbN film. The method of the present disclosure avoids the use of ultra-high vacuum systems, buffer layers, and expensive substrates, thereby making the method easily scalable and cost effective. The resulting NbN film is polycrystalline, comprising a d-NbN phase with a face-centered cubic structure, and exhibits a superconducting transition temperature making it suitable for superconducting device applications.
Disclaimer: Curated by HT Syndication.
