MUMBAI, India, July 24 -- Intellectual Property India has published a patent application (202611064316 A) filed by Noida Institute Of Engineering & Technology on May 21, 2026, for A High-Isolation Rf Switch Design For Transmitters.
Inventors include Ranjana Singh; and Dr. Mangey Ram Nagar.
The application for the patent was published on July 17, 2026, under issue no. 29/2026.
Abstract: A high-isolation RF switch design for transmitters is disclosed. The design includes a transmitter RF input port, selected and isolated output ports, a stacked series switching arm, a distributed shunt isolation arm, an absorptive termination network, a bias distribution network, grounded guard conductors, and impedance compensation elements. The switch routes high-power RF energy toward a selected transmitter path while suppressing leakage into inactive branches. The arrangement improves isolation, power handling, switching stability, and compact RF front-end integration.
Disclaimer: Curated by HT Syndication.
