MUMBAI, India, Oct. 12 -- Intellectual Property India has published a patent application (202511024470 A) filed by Lovely Professional University on March 19, 2025, for A Gan Rf Power Amplifier For Wearable And Implantable Microwave Devices.
Inventors include Dr. Sudhakar Singh; and Dr. Rajesh Kumar.
The application for the patent was published on October 09, 2026, under issue no. 41/2026.
Abstract: The present invention discloses a GaN RF power amplifier for wearable and implantable microwave devices. The invention involves a GaN-based digital-controlled broadband mimic power amplifier designed to address the needs of high-frequency applications. It utilizes Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) to deliver high efficiency and output power over a broad frequency range. The amplifier is built on a Gallium Nitride layer, which provides high electron mobility and high breakdown voltage, essential for high-power applications. Key features include high power-added efficiency (PAE) for extended battery life, a compact design for easy integration, high output power for effective communication and sensing, advanced thermal management for stable operation, and versatility across various medical and consumer devices. The invention aims to significantly enhance the performance, usability, and reliability of wearable and implantable microwave devices, making them more efficient and effective in their respective applications
Disclaimer: Curated by HT Syndication.
