MUMBAI, India, Sept. 22 -- Intellectual Property India has published a patent application (202641109076 A) filed by Thinknex Technologies on September 11, 2026, for A Four-Pronged Hybrid Thin-Film Lithium Niobate / Silicon-Nitride Photonic Integrated Circuit With Graphene Guard-Ring Anti-Drift Stabilization, Inverse-Designed Polarization Metamaterial Filter, Three-Dimensional Interleaved Vertical Dual-Taper Coupler, And Etchless Strip-Loaded Waveguide Architecture.
Inventors include Casimeer Caroline Sangeetha; Arigala Haritha; Thatineni Meghana; and Bhavani Kumar Yellapragada.
The application for the patent was published on September 18, 2026, under issue no. 38/2026.
Abstract: A hybrid TFLN/SiN photonic integrated circuit comprises four coordinated subsystems. A graphene guard ring collects pyroelectric and photorefractive surface charge and is paired with a sub-threshold on-chip analog micro-inverter that nulls residual DC bias drift in hardware. An inverse-designed sub-wavelength pixelated metamaterial filter scatters TM-mode noise while transmitting a TE mode. A three-dimensional interleaved vertical dual-taper coupler transfers the optical mode between a silicon-nitride router that tapers to a tip narrower than 80 nm and an expanding TFLN channel, with a preferred loss below 0.1 dB. An etchless SiN strip on unetched TFLN avoids lithium-niobate plasma etch and raises yield. The circuit is intended for interferometric optical gyroscopes, quantum phase experiments and high-speed electro-optic modulators.
Disclaimer: Curated by HT Syndication.
