MUMBAI, India, June 24 -- Intellectual Property India has published a patent application (202411088531 A) filed by Indraprastha Institute Of Information Technology on November 15, 2024, for 5t Asymmetric (5ta) Sram Cell.
Inventors include Shroti, Ajay; and Grover, Anuj.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: The present disclosure relates to a static random-access memory (SRAM) integrated circuit having access transistors (PG1, PG2), driver transistors (PD1, PD2) and a read transistor (PR1). The circuit includes an assist circuitry for read and write action. The Iso area asymmetric 5TA SRAM cell is disclosed which has lower leakage and higher performance than the conventional 6T, 5T, and 4T SRAM cells. The high performance and low power consumption of 5TA makes it the perfect memory solution for low-power applications.
Disclaimer: Curated by HT Syndication.
