MUMBAI, India, Jan. 23 -- Intellectual Property India has published a patent application (202541004565 A) filed by Indian Institute Of Science, Bangalore, Karnataka, on Jan. 20, 2025, for 'ultra high-density non-volatile memory.'
Inventor(s) include Goswami, Sreetosh; and Bhat, Navakanta.
The application for the patent was published on Jan. 23, under issue no. 04/2026.
According to the abstract released by the Intellectual Property India: "A non-volatile memory (NVM) (100, 200) based on memristors is disclosed. The NVM comprises a substrate (102), a processing unit 5 (104) coupled to the substrate (102) for generating control signals for memory operations, an interconnect fabric (202) comprising insulating layers (204-1, 204-2) and conductive layers (206-1, 206-2), a first conductive layer (208-1-1) patterned to form bit lines, a layer of molecular material (1) disposed on the bit lines, and a second 10 conductive layer (210-1-1) patterned to form word lines oriented perpendicular to the bit lines forming a crossbar array. A memristor is formed at each intersection, comprising molecular material sandwiched between a respective bit line and word line, wherein each memristor stores multiple bits of data."
Disclaimer: Curated by HT Syndication.
