MUMBAI, India, June 13 -- Intellectual Property India has published a patent application (202417073132 A) filed by Yangtze Memory Technologies Co. Ltd., Hubei, China, on Sept. 27, 2024, for 'three-dimensional memory and preparation method therefor, storage system, and electronic device.'
Inventor(s) include Zhang, Zhong; Wang, Di; Zhou, Wenxi; Zhang, Kun; Xia, Zhiliang; and Huo, Zongliang.
The application for the patent was published on June 13, under issue no. 24/2025.
According to the abstract released by the Intellectual Property India: "The present disclosure provides a three-dimensional memory and a preparation method therefor, a storage medium, and an electronic device. The three-dimensional memory comprises a stacked structure, a plurality of first stop portions arranged along a first direction, a protective layer, and a plurality of contact columns. The stacked structure comprises a step structure, and the step structure comprises a plurality of staircase structures arranged along the first direction and having different heights along a second direction. The plurality of first stop portions are located on a plurality of steps of at least one staircase structure. The protective layer covers the step structure and the first stop portions, and the protective layer is at least partially located between the first stop portions and steps adjacent to the first stop portions. The contact columns pass through the protective layer and the first stop portions, and are connected to gate layers in the steps corresponding to the first stop portions."
The patent application was internationally filed on Mar. 17, 2023, under International application No.PCT/CN2023/082250.
Disclaimer: Curated by HT Syndication.
