MUMBAI, India, June 6 -- Intellectual Property India has published a patent application (202414084146 A) filed by Lg Display Co. Ltd., Seoul, Republic of Korea, on Nov. 4, 2024, for 'thin film transistor, manufacturing method thereof, and display apparatus comprising the same.'
Inventor(s) include Jeon, Hyeji; Choi, Soyang; Lim, Yubeen; and Yi, Youngjin.
The application for the patent was published on June 6, under issue no. 23/2025.
According to the abstract released by the Intellectual Property India: "A thin film transistor (100) includes a buffer layer (120) on a base substrate (110) and having a trench (125); an active layer (130) on the buffer layer (120); and a gate electrode (150) overlapping the active layer (130). The active layer (130) includes a channel area (130n), a source area (130a), and a drain area (130b). The trench (125) includes a first trench (126) having the source area (130a) therein, and a second trench (127) having the drain area (130b) therein. The channel area (130n) includes a first channel area (130n1), a second channel area (130n2) on one side of the first channel area (130n1) and in the first trench (126), and a third channel area (130n3) on the other side of the first channel area (130n1) and in the second trench (127). A distance between the upper surface of the base substrate (110) and the second channel area (130n2) is shorter than a shortest distance between the upper surface of the base substrate (110) and the first channel area (130n1)."
Disclaimer: Curated by HT Syndication.
