MUMBAI, India, May 1 -- Intellectual Property India has published a patent application (202641051815 A) filed by National Institute Of Technology, Kozhikode, Kerala, on April 23, for 'surface-tailored zif-8/cnt-ato heterojunction thin films for selective hydrogen gas sensing in the sub-ppm level.'
Inventor(s) include Soney Varghese; and Sneha C.
The application for the patent was published on May 1, under issue no. 18/2026.
According to the abstract released by the Intellectual Property India: "The present invention relates to a heterojunction-based thin-film gas sensor for highly selective and sensitive detection of hydrogen gas at sub-ppm concentrations. The present invention comprises a surface-engineered composite comprising zeolitic imidazolate framework-8 (ZIF-8), carbon nanotubes (CNTs), and antimony-doped tin oxide (ATO). ZIF-8 is employed as a selective adsorption layer owing to its high surface area and pore aperture dimensions comparable to the kinetic diameter of hydrogen molecules, enabling preferential diffusion and adsorption of hydrogen gas. The thin film is integrated with interdigitated electrodes to form a resistive-type gas sensor device. The invention also includes a method for fabricating the heterojunction thin film and its integration into hydrogen sensing devices for safety monitoring, leak detection, and energy-related applications."
Disclaimer: Curated by HT Syndication.
