MUMBAI, India, Jan. 8 -- Intellectual Property India has published a patent application (202511105679 A) filed by Chitkara University; and Chitkara Innovation Incubator Foundation, Rajpura, Punjab, on Oct. 31, 2025, for 'sram cell architecture for in-memory xor logic computation.'
Inventor(s) include Kulbhushan Sharma; Madan Mohan Sharma; and Ananya.
The application for the patent was published on Dec. 12, under issue no. 50/2025.
According to the abstract released by the Intellectual Property India: "A SRAM cell architecture for in-memory XOR logic computation, comprises of a first stage 101 consisting of a pair of SRAM cells 108 for storing logic bits '0' and '1' respectively, a write circuitry is enabled to turn ON access transistors for data writing operation, enabling storage of the input bits at complementary nodes (Q, QBAR) within the SRAM cells 108, a read circuitry configured to enable the RBL during read operation, a first read bit line (RBL1) and a second read bit line (RBL2) are pre-charged to a supply voltage (VDD), a second stage 104 comprising a pair of differential sense amplifiers (SA1, SA2) 105, 106, the SA1 105 is configured to observe the RBL1 and generate a NAND output signal based on voltage (VRBL1) variations, and the SA2 106 is configured to observe RBL2 and generate an OR output signal based on voltage (VRBL2) variations."
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