MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541001775 A) filed by Agnit Semiconductors Private Ltd., Bengaluru, Karnataka, on Jan. 8, 2025, for 'single gate bias power amplifier circuit with tailored threshold transistors and manufacturing methods thereof.'
Inventor(s) include Digbijoy Neelim Nath; and Hareesh Chandrasekar.
The application for the patent was published on Feb. 13, under issue no. 07/2026.
According to the abstract released by the Intellectual Property India: "The invention relates to an innovative power amplifier (PA) circuit design aimed at enhancing efficiency and simplifying circuit complexity for modern wireless communication systems. This design employs a hybrid architecture that combines a main amplifier and an auxiliary amplifier, which work together to optimize performance across a broad range of output power levels. A key feature of the design is the use of a single gate bias voltage, applied to both amplifiers, eliminating the need for separate bias supplies and reducing overall circuit complexity. The amplification circuitry includes a main amplifier with a first transistor, an auxiliary amplifier with a second transistor, and a common gate bias supply. The transistors are fabricated either on a single wafer or separate wafers, with tailored threshold voltages to ensure optimal performance and efficient operation."
Disclaimer: Curated by HT Syndication.
