MUMBAI, India, March 14 -- Intellectual Property India has published a patent application (202544075732 A) filed by Samsung Electronics Co. Ltd., Gyeonggi, Republic of Korea, on Aug. 8, 2025, for 'semiconductor device with gate contact region formed in partial region of gate runner.'
Inventor(s) include Taehun Kim; Jeonghwan Park; Mingu Ko; Young Hwan Park; Sewoong Oh; and Sangsu Woo.
The application for the patent was published on March 13, under issue no. 11/2026.
According to the abstract released by the Intellectual Property India: "A semiconductor device includes: a substrate including (i) a first active region comprising a plurality of unit cells, and (ii) a peripheral area surrounding at least a portion of the first active region; a gate frame comprising (i) a first portion in a wiring region and extending along a first direction, (ii) a second portion extending from one side of the first portion along a second direction crossing the first direction and connected to a first end of at least a portion among the plurality of unit cells, and (iii) a third portion extending from the first side along the second direction and connected to a second end of at least a portion among the plurality of unit cells; a first gate runner on the first portion of the gate frame and the second portion of the gate frame; and a second gate runner on the third portion."
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