MUMBAI, India, Oct. 31 -- Intellectual Property India has published a patent application (202517093571 A) filed by Minebea Power Semiconductor Device Inc., Ibaraki, Japan, on Sept. 29, for 'semiconductor device.'
Inventor(s) include Nanjo Hiroyuki; Sakurai Kenji; and Utsumi Tomoyuki.
The application for the patent was published on Oct. 31, under issue no. 44/2025.
According to the abstract released by the Intellectual Property India: "Provided is a semiconductor device which allows cascode connection using a high voltage element having a low gate withstand voltage, thereby increasing the withstand voltage. A semiconductor device (100) is provided with: a first semiconductor element (101); a second semiconductor element (102); a resistor (111); a zener diode (112); and a high-voltage diode (113). The drain of the HVNM1 and the source of the HVNM2 are connected to each other in the form of a cascode connection, the resistor (111) and the zener diode (112) are connected between the gate and the source of the HVNM2, and the high voltage diode (113) is connected between the gate of the HVNM1 and the gate of the HVNM2."
The patent application was internationally filed on Oct. 31, 2023, under International application No.PCT/JP2023/039238.
Disclaimer: Curated by HT Syndication.
