MUMBAI, India, April 20 -- Intellectual Property India has published a patent application (202414098897 A) filed by Hon Hai Precision Industry Co. Ltd., New Taipei City, Taiwan, on Dec. 13, 2024, for 'semiconductor device.'
Inventor(s) include Jhe-Hao Chang; and Jheng-Sheng You.
The application for the patent was published on April 17, under issue no. 16/2026.
According to the abstract released by the Intellectual Property India: "A semiconductor device (10) includes a substrate structure (100), a source structure (110), a drain structure (120), and a gate structure (130). The source structure (110), the drain structure (120), and the gate structure (130) are over the substrate structure (100) and arranged along a first direction (D1). The drain structure (120) includes first island structures (121) and second island structures (122) arranged alternately and spaced apart along a second direction (D2). The second direction (D2) is substantially perpendicular to the first direction (D1). Each of the first island structures (121) includes a p-type semiconductor layer (121a) and a first metal electrode (121b) over the p-type semiconductor layer (121a). Each of the second island structures (122) includes a second metal electrode (122a). In a conducting state, a potential of the first metal electrode (121b) is different from a potential of the second metal electrode (122a)."
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