MUMBAI, India, Nov. 7 -- Intellectual Property India has published a patent application (202547095875 A) filed by Qualcomm Incorporated, San Diego, on Oct. 6, for 'self-aligned contact structures and methods for making the same.'
Inventor(s) include Li, Xia; Bao, Junjing; and Zhu, John Jianhong.
The application for the patent was published on Nov. 7, under issue no. 45/2025.
According to the abstract released by the Intellectual Property India: "A self-aligned contact (SAC) and method for making the same is disclosed. In an aspect a field effect transistor (FET) structure comprises a channel connecting a first source or drain (S/D) region to a second S/D region, a gate structure, comprising a multi- layer metal gate between gate spacers, disposed above a gate region that at least partially surrounds the channel, a self-alignment structure, also referred to as a "hat", disposed above the gate structure and covering at least the multi-layer metal gate and the gate spacers, and a first S/D contact that is self-aligned to the hat and connected to the first S/D region. During fabrication, a self-assembly monolayer (SAM) is used to precisely align the hat over the multi-layer metal gate. The S/D contacts are then self-aligned to the hat, even if the etch mask has an overlay error. The hat also shields the gate structure during an etch."
The patent application was internationally filed on Apr. 15, 2024, under International application No.PCT/US2024/024594.
Disclaimer: Curated by HT Syndication.
