MUMBAI, India, Aug. 29 -- Intellectual Property India has published a patent application (202517073011 A) filed by International Business Machines Corporation, Armonk, U.S.A., on July 31, for 'scalable qubit biasing device based on multiplexed charge storage.'
Inventor(s) include Zota, Bogdan Cezar; Cha, Eunjung; Morf, Thomas; Prathapan, Mridula; Mueller, Peter; and Ferraris, Alberto.
The application for the patent was published on Aug. 29, under issue no. 35/2025.
According to the abstract released by the Intellectual Property India: "Embodiments including a semiconductor device circuit (100) for biasing gates of a qubit device as well as a method for operating the device are disclosed. The embodiments may include a multiplexed array of capacitor cells (102, 104, 106, 108), where each capacitor cell includes a transistor-controlled capacitor (C1, C2, C3, C4), where each capacitor is connected between a drain of a respective transistor (T1, T2, T3, T4) and ground, where each source of all transistors of all capacitor cells are connected to a common control point (111), and where each gate of the transistors of the capacitor cells are individually voltage controllable (Vg1, Vg2, Vgn). The embodiment may include a charging unit (110) connected to the common control point, and a discharging unit (112) connected to the common control point, where the charging unit and the discharging unit are alternatively activatable."
The patent application was internationally filed on Feb. 13, 2024, under International application No.PCT/EP2024/053572.
Disclaimer: Curated by HT Syndication.
