MUMBAI, India, April 20 -- Intellectual Property India has published a patent application (202647042296 A) filed by Pva Tepla Ag, Wettenberg, Germany, on April 2, for 'realtime measurement of crystal growth.'
Inventor(s) include Mitic, Slobodan.
The application for the patent was published on April 17, under issue no. 16/2026.
According to the abstract released by the Intellectual Property India: "A method for obtaining information in realtime from a crystal growth process or crystal growth system in a high temperature environment is shown, such as for growing a silicon carbide crystal, the method comprising the steps of arranging a crystal or crystal seed in a hot zone of said crystal growth system, hermetically sealing said hot zone, providing a probing signal by means of a signal generator and directing said probing signal onto a first surface of said crystal inside said hot zone, analysing a signal response and retrieving at least one process status or process development information."
The patent application was internationally filed on Sept. 06, 2024, under International application No.PCT/EP2024/074979.
Disclaimer: Curated by HT Syndication.
