Intellectual Property India Publishes Patent Application for 'Process For Inducing Interlamellar Porosity In Zn-Ni-Mg Tri-Cation-Doped Cucro2 Toward High Thermoelectric Figure Of Merit' Filed by University Of Calicut

MUMBAI, India, May 29 -- Intellectual Property India has published a patent application (202641058375 A) filed by University Of Calicut, Malappuram, Kerala, on May 7, for 'process for inducing interlamellar porosity in zn-ni-mg tri-cation-doped cucro2 toward high thermoelectric figure of merit.'

Inventor(s) include Poother Kuzhikkal, Jamshina Sanam; and Puthiya Purayil, Pradyumnan.

The application for the patent was published on May 29, under issue no. 22/2026.

According to the abstract released by the Intellectual Property India: "A Zn-Ni-Mg tri-doped CuCrO2 based thermoelectric material and a process for preparing Zn-Ni-Mg tri-doped CuCrO2 based thermoelectric material for inducing interlamellar porosity. The process includes mixing oxide of Mg, Ni and Zn with Cr2O3 and Cu2O to obtain a fine homogenously blended mixture. Annealing the fine homogenously blended mixture for 2 to 4 hours. Cooling the fine homogenously blended mixture followed by post-grinding and subsequent pressing to form pellets. Sintering the pellets for 11 to 13 hours to achieve densification and phase formation."

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