MUMBAI, India, June 27 -- Intellectual Property India has published a patent application (202517053537 A) filed by International Business Machines Corporation, Armonk, U.S.A., on June 2, for 'phase-change memory device with conductive cladding.'
Inventor(s) include Cohen, Guy M.; Cheng, Kangguo; Li, Juntao; Xie, Ruilong; and Frougier, Julien.
The application for the patent was published on June 27, under issue no. 26/2025.
According to the abstract released by the Intellectual Property India: "A device structure for a phase-change memory device is disclosed. The device structure includes a top electrode, a phase-change material that is recessed between two layers of resistive liner material, and a conductive material. The conductive material contacts the sidewall of the top electrode, the sidewall of the phase-change material, and a portion of a top surface and a bottom surface of each of the two layers of the resistive liner material. The device structure includes a heater contacting a bottom electrode and the bottom layer of the resistive liner material. The heater is in a first bilayer dielectric. A second bilayer dielectric is under the top electrode."
The patent application was internationally filed on Oct. 25, 2023, under International application No.PCT/CN2023/126461.
Disclaimer: Curated by HT Syndication.
