MUMBAI, India, May 29 -- Intellectual Property India has published a patent application (202611053236 A) filed by Poornima University; Dr. Peeyush Kumar Kamlesh; Dr. Shri Kant; Dr. Rakesh Aggarwal; and Dr. Vivek Kumar Jain, Jaipur, Rajasthan, on April 27, for 'performance improvement of polymer and silicon solar cells using transition metal oxide interfaces.'
Inventor(s) include Dr. Peeyush Kumar Kamlesh; Dr. Shri Kant; Dr. Rakesh Aggarwal; and Dr. Vivek Kumar Jain.
The application for the patent was published on May 29, under issue no. 22/2026.
According to the abstract released by the Intellectual Property India: "The present invention discloses a structurally engineered photovoltaic device configured to enhance the performance of polymer-based and silicon-based solar cells through the integration of a transition metal oxide interfacial layer. The device comprises a substrate support structure, a transparent conductive layer, a photovoltaic absorber layer, a transition metal oxide interfacial layer, and a conductive electrode layer arranged in a controlled stacked configuration. The transition metal oxide interfacial layer is precisely deposited using a deposition control unit with integrated sensing arrangements to regulate thickness and uniformity at the nanometer scale. The interfacial layer is configured to improve energy level alignment, enable selective charge carrier transport, and reduce interfacial recombination losses. The invention further incorporates thermal regulation during fabrication to control material properties and enhance device stability. As a result, the photovoltaic device exhibits improved power conversion efficiency, enhanced electrical output characteristics, and increased resistance to environmental degradation, enabling scalable and cost-effective manufacturing."
Disclaimer: Curated by HT Syndication.
