MUMBAI, India, Nov. 21 -- Intellectual Property India has published a patent application (202541098129 A) filed by Manipal Academy Of Higher Education, Manipal, Karnataka, on Oct. 11, for 'organic transistor with in-plane and out-of-plane bottom gate extension for hydrogen detection and method thereof.'
Inventor(s) include Pramod Martha; and Sukant Kumar Tulo.
The application for the patent was published on Nov. 21, under issue no. 47/2025.
According to the abstract released by the Intellectual Property India: "The invention relates to a hydrogen gas sensing device based on an organic field effect transistor with an extended gate configuration. The device employs a platinum gate extended through in-plane and out-of-plane trench structures to increase the active interaction area for hydrogen adsorption while maintaining a compact footprint. A pentacene organic semiconductor layer forms the charge transport channel, with its electrical properties modulated by hydrogen-induced work function shifts of the platinum gate. A protective encapsulation layer ensures environmental stability while selectively exposing the gate for gas interaction. A reference transistor fabricated in parallel but shielded from hydrogen exposure enables differential operation. The outputs of the sensing and reference transistors are processed by a differential amplifier with a load resistor, enhancing signal reliability by cancelling environmental variations such as humidity and temperature. The device operates at room temperature with low supply voltage, enabling sensitive, stable, and low-cost hydrogen detection."
Disclaimer: Curated by HT Syndication.
