MUMBAI, India, June 27 -- Intellectual Property India has published a patent application (202517054340 A) filed by Commissariat A L'Energie Atomique Et Aux Energies Alternatives; and Lynred, Paris, on June 5, for 'mwir barrier photodetector in which the absorbent zone comprises a stack of a solid portion and a superlattice.'
Inventor(s) include Gravrand, Olivier; and Pere Laperne, Nicolas.
The application for the patent was published on June 27, under issue no. 26/2025.
According to the abstract released by the Intellectual Property India: "The invention relates to a MWIR barrier photodetector which is suitable for detecting relevant light radiation having a central wavelength of between 3 and 5 m and comprises a semiconductor structure (10) which has a barrier made of III-Sb, rests on a support substrate (2) made of III-Sb and consists of: an absorbent zone (11); a barrier layer (12); and a contact layer (13). The absorbent zone (11) consists of a stack of two portions: o a first absorbent portion (11.1) which is doped with a first type of conductivity, is made of a solid material based on InAsSb and is located on the side of the support substrate (2); and o a second absorbent portion (11.2) which is doped with the first type of conductivity, consists of a superlattice and is located between the first absorbent portion (11.1) and the barrier layer (12)."
The patent application was internationally filed on Dec. 01, 2023, under International application No.PCT/FR2023/051896.
Disclaimer: Curated by HT Syndication.
