MUMBAI, India, May 1 -- Intellectual Property India has published a patent application (202641049891 A) filed by Easwari Engineering College; and Srm Institute Of Science And Technology, Ramapuram Campus, Chennai, Tamil Nadu, on April 20, for 'method for additive manufacturing of hastelloy c-22 using pulsed cold metal transfer.'
Inventor(s) include Dr. D. Sakthimurugan; Nithish Kumar M; Tejnath J M; and Sidharthan T.
The application for the patent was published on May 1, under issue no. 18/2026.
According to the abstract released by the Intellectual Property India: "The current invention presents a method to produce Hastelloy C-22 components through pulsed Cold Metal Transfer (CMT) Wire Arc Additive Manufacturing (WAAM) technology. The system utilizes controlled pulsed arc deposition to produce reduced thermal energy introduction together with enhanced layer connection and decreased production faults. The manufactured components display a microstructure which develops through even grain distribution and specific control of crystallographic texture, which produces better mechanical characteristics that include higher strength and hardness and improved ductility. The method enables production of corrosion-resistant nickel-based alloy components which maintain exceptional structural strength. The technique provides operators with complete control of deposition settings which helps to decrease remaining stresses together with material warping. The invention functions best in situations which need advanced materials to withstand demanding conditions found in chemical processing and marine and aerospace applications."
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