MUMBAI, India, Jan. 9 -- Intellectual Property India has published a patent application (202541133050 A) filed by Indian Institute Of Technology, Hyderabad, Telangana, on Dec. 29, 2025, for 'magnesium oxide-based memristor device having multi-bit quantum memory and a method of fabrication thereof.'
Inventor(s) include Suryanarayana Jammalamadaka; and Prince Kumar.
The application for the patent was published on Jan. 9, under issue no. 02/2026.
According to the abstract released by the Intellectual Property India: "The present disclosure discloses a magnesium oxide-based memristor device (100) having multi-bit memory, and a method of fabrication thereof. The memristor device (100) has 6.5-bit memory resolution and 4-bit quantized conductance. The memristor device (100) comprises a bottom electrode (102) comprising fluorine-doped tin oxide (FTO), a resistive switching layer (104) comprising magnesium oxide (MgO) disposed over the bottom electrode (102), and a top electrode (106) comprising silver (Ag) disposed over the resistive switching layer (104). The resistive switching layer (104) is fabricated using radio-frequency (RF) magnetron sputtering. The memristor device (100) is configured to exhibit quantized conductance behaviour comprising 18 discrete quantized conductance states, and multilevel current storage comprising approximately 92 current states corresponding to about 6.5-bit memory resolution."
Disclaimer: Curated by HT Syndication.
