MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202541038068 A) filed by Agnit Semiconductors Private Limited, Bengaluru, Karnataka, on April 21, 2025, for 'low voltage enhancement-mode gan rf transistor and methods of manufacturing thereof.'
Inventor(s) include Sandeep Kumar; Terirama Thingujam; Richika Arya; Nithin; Hareesh Chandrasekar; and Digbijoy N Nath.
The application for the patent was published on Feb. 13, under issue no. 07/2026.
According to the abstract released by the Intellectual Property India: "The present invention discloses a normally-off GaN High Electron Mobility Transistor (HEMT) optimized for low-voltage RF applications, including battery-powered devices and wireless communication systems. The device features a recessed gate structure that depletes charge carriers beneath the gate, achieving a positive threshold voltage without requiring a negative gate bias. The transistor incorporates an optimized source-drain spacing of 1 to 2 microns, minimizing on-resistance and achieving a low knee voltage of 2V or below, enabling efficient operation at supply voltages as low as 7.4V. The fabrication method employs a two-step plasma etching process using fluorine-based and chlorine-based plasma to precisely control the gate recess depth and threshold voltage. A high-k gate dielectric layer is deposited to enhance gate control and device reliability. This design enables efficient, low-power operation, making it suitable for next generation RF and communication technologies requiring high performance at reduced operating voltages."
Disclaimer: Curated by HT Syndication.
