MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202547067918 A) filed by Qualcomm Incorporated, San Diego, on July 16, for 'integrated device comprising a pair of inductors with low or no mutual inductance.'
Inventor(s) include Yen, Hsiao-Tsung; Hua, Xingyi; and Kim, Jeongil Jay.
The application for the patent was published on July 25, under issue no. 30/2025.
According to the abstract released by the Intellectual Property India: "An integrated device comprising a die substrate; and a die interconnection portion coupled to the die substrate. The die interconnection comprises a first inductor and a second inductor. The first inductor comprises a first spiral comprising a first origin and a first tail and a second spiral comprising a second origin and a second tail."
The patent application was internationally filed on Mar. 07, 2024, under International application No.PCT/US2024/018893.
Disclaimer: Curated by HT Syndication.