Intellectual Property India Publishes Patent Application for 'Inline Resistor Integrated With Conductive Contact Pad Structure' Filed by Bae Systems Information And Electronic Systems Integration Inc.

MUMBAI, India, March 14 -- Intellectual Property India has published a patent application (202517131280 A) filed by Bae Systems Information And Electronic Systems Integration Inc., New Hampshire, U.S.A., on Dec. 24, 2025, for 'inline resistor integrated with conductive contact pad structure.'

Inventor(s) include Wyckoff, Nathaniel P; Warren, Alexander S.; Mauermann, Jacob R.; and Smith, Justin D.

The application for the patent was published on March 13, under issue no. 11/2026.

According to the abstract released by the Intellectual Property India: "An integrated circuit structure includes (i) a first layer including a first metal, (ii) a second layer above and in contact with the first layer, the second layer including a resistive material, and (iii) a third layer above and in contact with the second layer, the third layer including a second metal. In an example, the resistive material is different from one or both the first metal and the second metal. An interconnect component is above and in contact with the second layer. In an example, the interconnect component is a solder bump or a solder ball. In an example, a resistivity of the resistive material of the second layer is at least 20%, or at least 50% greater than a resistivity of each of the first and third layers. In an example, the resistive material includes one or more of (i) a third metal different from the first and second metals, (ii) a metalloid, and (iii) the third metal and at least one of oxygen and nitrogen."

The patent application was internationally filed on May 29, 2024, under International application No.PCT/US2024/031389.

Disclaimer: Curated by HT Syndication.