MUMBAI, India, Feb. 13 -- Intellectual Property India has published a patent application (202511132536 A) filed by Indian Institute Of Technology, Roorkee, Uttarakhand, on Dec. 27, 2025, for 'high specific capacity layered double hydroxide and telluride-based electrode preparation method and application thereof.'
Inventor(s) include Prof. Ashish Yadav; Ms. Antra Choubey; and Mr. Himanshu Chauhan.
The application for the patent was published on Feb. 13, under issue no. 07/2026.
According to the abstract released by the Intellectual Property India: "The present invention relates to a composite electrode material comprising cobalt-vanadium layered double hydroxide (CoV-LDH) grown in situ over a molybdenum telluride (MoTe2) structure deposited on a conductive porous substrate. The composite is prepared through sequential solvothermal processes that enable uniform nucleation of MoTe2 followed by vertically aligned CoV-LDH growth, resulting in a hierarchical porous architecture with enhanced ion diffusion and electron transport. The electrode exhibits high specific capacity, excellent rate capability, and long-term cycling stability. A hybrid supercapacitor device fabricated using the CoV-LDH@MoTe2 electrode as the positive electrode and activated carbon as the negative electrode demonstrates a wide operational potential window, high energy, and superior durability. The invention provides an efficient and scalable electrode design suitable for advanced energy-storage applications, including hybrid supercapacitors and high-performance electrochemical devices."
Disclaimer: Curated by HT Syndication.
